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10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet flow pfc 0 600 v/ 2 x 99mohm / 200 khz vincotech clip-in housing compact and low inductance design suitable for interleaved topology suitable for curent sensing in drain cp series coolmos tm and sic boost fred pfc for welding fz062ta099fh01 pfc for smps pfc for motor drives pfc for ups pfc for battery charger fz062ta099fh; without scr, current sense in drain fz062ta099fh01; with scr, current sense in drain coolmos is a trademark of infineon technologies ag t j =25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v maximum junction temperature t jmax 150 c input rectifier thyristor repetitive peak reverse voltage v rrm 800 v surge forward current i fsm 250 a i 2 t 310 a 2 s maximum junction temperature t jmax 150 c pfc mosfet v ds 600 v t ar limited by tjmax i ar t p limited by tjmax 11 a mj avalanche energy, repetitive e ar i d =11a v dd =50v 1,2 mj t j =t j max t p =10ms 250 40 features flow 0 housing target applications schematic a types i2t-value maximum ratings i f a 2 s i fsm condition t j =t j max t j =t j max t h =80c i f i dpulse drain to source voltage t j =25c t j =t j max t j =t j max t p =10ms t p limited by t j max i d =11 a v dd =50 v a w a aa w input rectifier diode dc forward currentpulsed drain current i2t-value dc forward currentsurge forward current dc drain current i 2 t power dissipation p tot i d avalanche energy, single pulse e as avalanche current, repetitive power dissipation fz062ta099fh p tot 44 t h =80c 93 16 800 35 t h =80c t h =80c t h =80c 34 310 t j =25c copyright vincotech 1 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition reverse diode dv/dt d v /d t 15 v/ns t jmax 150 c c.t. inverse diodepfc diode pfc shunt dc link capacitor thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm 9,42 mm v/ns dv/dt ruggedness d v /d t v ds =0...480v t j =t j max t j =25c t j =t j max 175 175 a 600 31,6 10 w i f power dissipation p tot v gs repetitive peak forward current t c =25c t c =25c t j =t j max t p limited by t j max t p limited by t j max t j =t j max t h =80c power dissipation i f gate-source peak voltagedc forward current i f p tot v rrm t jmax p tot power dissipation peak repetitive reverse voltagedc forward current i frm maximum junction temperature repetitive peak forward currentdc forward current w c a vv a a c w v w peak repetitive reverse voltage t j =25c maximum junction temperature power dissipation p tot v rrm t j =t j max maximum junction temperature t jmax i frm a -40+(tjmax - 25) c storage temperature t stg -40+125 c 500 v t c =25c 64 clearance insulation voltagecreepage distance t op operation temperature under switching condition max.dc voltage v max t h =80c t h =80c t h =80c 1419 37 t h =80c 16 62 8 600 +/- 20 50 copyright vincotech 2 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 1,16 1,4 tj=125c 1,11 tj=25c 0,9 tj=125c 0,77 tj=25c 9 tj=125c 12 tj=25c 0,02 tj=150c 2 thermal resistance chip to heatsink r th(j-s) thermal grease thickness50um =1 w/mk 1,72 k/w tj=25c 1,25 1,6 tj=125c 1,22 tj=25c 0,93 tj=125c 0,82 tj=25c 0,011 tj=125c 0,014 tj=25c 0,05 tj=125c 2 ig=0,5a tj=25c 2 dig/dt=0,5a/us ig=0,2a tj=25c <1 dig/dt=0,2a/us tj=125c 500 ig=0,2a tj=125c 150 f=50hz vd=2/3vdrm tj=125c 150 tp=200us vd=6v tj=25c 50 tp=10us tj=25c 90 ig=0,2a vd=6v tj=25c 1,3 tj=-40c 1,6 vd=6v tj=25c 11 28 tj=-40c 50 tj=125c 0,2 tj=125c 1 thermal resistance chip to heatsink r th(j-s) 1,57 tj=25c 111 tj=125c 223 tj=25c 2,5 3,0 3,9 tj=125c tj=25c 200 tj=125c tj=25c 10 tj=125c tj=25c 21 tj=125c 21 tj=25c 4 tj=125c 4 tj=25c 71 tj=125c 73 tj=25c 3 tj=125c 3 tj=25c 0,055 tj=125c 0,059 tj=25c 0,008 tj=125c 0,013 tj=25c tj=125c tj=25c tj=125c tj=25c tj=125c thermal resistance chip to heatsink r th(j-s) thermal grease thickness50um = 1 w/mk 1,13 k/w 600 v avalanche breakdown voltage v (br)ds 0 100 zero gate voltage drain current i dss 0 thermal grease thickness50um = 1 w/mk 0 f=1mhz t f rgoff=4 ?rgon=4 ? fall timeturn-off energy loss input capacitance output capacitance gate to drain charge total gate charge c iss reverse transfer capacitance gate to source charge turn-on energy loss c oss c rss t r slope resistance (for power loss calc. only)critical rate of rise of on-state current gate controlled rise time reverse currentgate controlled delay time r t i r (d v /d t ) cr t gr t gd gate non-trigger voltage gate trigger current i l critical rate of rise of off-state voltage (d i /d t ) cr latching current v gd i gt gate trigger voltage value conditions 15 2,5 20 60 input rectifier diode static drain to source on resistance v gt 1500 i gss t d(off) t d(on) e on q gs q gd q ge 0 gate to source leakage current 400 0 turn on delay time rise time turn off delay time e off 30 characteristic values forward voltagethreshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t 30 30 vv m? ma forward voltage v f i r threshold voltage (for power loss calc. only) v to reverse current input rectifier thyristor vv m? 30 30 vd=1/2vdrm 18 0,0003 vd=1/2vdrm tj=25c tj=25c 0,0012 20 18 400 600 10 10 gate threshold voltage pfc mosfet gate non-trigger current i gd r ds(on) circuit commutated turn-off timeholding current i h t q v (gs)th vd=2/3vdrm 3026 100 800 vd=1/2vdrm vd=2/3vdrm 40 14 130 2800 m? k/w ua na v nc pf ma v mws ns a/s s s v/s ma s vds mama v ma copyright vincotech 3 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values tj=25c 1,66 2 tj=125c 1,61 thermal resistance chip to heatsink r th(j-s) thermal grease thickness50um = 1 w/mk 5,12 k/w tj=25c 1,53 1,8 tj=150c 1,68 tj=25c 400 tj=150c tj=25c 24,4 tj=150c 21,9 tj=25c 8 tj=150c 8 tj=25c 0,11 tj=150c 0,09 tj=25c 0,02 tj=150c 0,02 tj=25c 9935 tj=150c 7532 thermal resistance chip to heatsink r th(j-s) thermal grease thickness50um = 1 w/mk 2,56 k/w 9,4 10 10,6 < 50 < 6.5 < 3 power dissipation constantvincotech ntc reference c m? ppm/k a/s mws % nf 540 600 k? 21,5 480 210 400 20c to 60c rgon=4 ? v f v f diode forward voltage i rm e rec l tc r thi internal heat resistanceinductance temperature coeficient ( d i rf / dt ) max t rr forward voltagereverse leakage current peak recovery current reverse recovery time reverse recovered energy q rr pfc diode r reverse recovery charge pfc shunt i rrm c.t. inverse diode v 10 15 600 16 peak rate of fall of recovery current 6 mw/k power dissipation p mw thermistor rated resistance r deviation of r100 r/r r100=1486 ? r1 value dc link capacitor c value c a ns v a 25 25 100 25 -4,5 3,5 +4,5 k/w nh b (25/50) 25 3884 k b (25/100) 25 3964 f b-valueb-value k copyright vincotech 4 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 1 inverse diode figure 2 inverse diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f( v f ) z thjh = f( t p ) t p = 250 s d = t p / t r thjh = 5,12 k/w figure 3 inverse diode figure 4 inverse diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) t j = 150 oc t j = 150 oc pfc switch & c.t. inverse diode 0 4 8 12 16 20 0 1 1 2 2 3 3 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 8 16 24 32 40 0 50 100 150 200 t h ( o c) p tot (w) 0 2 4 6 8 10 12 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 5 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 1 pfc mosfet figure 2 pfc mosfet typical output characteristics typical output characteristics i d = f( v ds ) i d = f( v ds ) t p = 250 s t p = 250 s t j = 25 c t j = 125 c v gs from 3 v to 13 v in steps of 1 v v gs from 3 v to 13 v in steps of 1 v figure 3 pfc mosfet figure 4 pfc mosfet typical transfer characteristics typical diode forward current asa function of forward voltage i d = f( v ds ) i f = f( v f ) t p = 250 s t p = 250 s v ds = 10 v pfc 0 10 20 30 40 50 0 1 2 3 4 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 8 16 24 32 40 0 1 1 2 2 3 3 4 4 5 5 v ds (v) i d (a) 0 8 16 24 32 40 0 1 1 2 2 3 3 4 4 5 5 v ds (v) i d (a) 0 4 8 12 16 20 0 1 2 3 4 5 6 v gs (v) i d (a) t j = 25c t j = t jmax -25c copyright vincotech 6 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 5 pfc mosfet figure 6 pfc mosfet typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f( i d ) e = f( r g ) inductive load inductive load t j = 25/125 c t j = 25/125 c v ds = 400 v v ds = 400 v v gs = 10 v v gs = 10 v r gon = 4 ? i d = 15 a r goff = 4 ? figure 7 pfc mosfet figure 8 pfc mosfet typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f( i c ) e rec = f( r g ) inductive load inductive load t j = 25/125 c t j = 25/125 c v ds = 400 v v ds = 400 v v gs = 10 v v gs = 10 v r gon = 4 ? i d = 15 a r goff = 4 ? pfc t j = t jmax -25c e rec t j = 25c e rec 0,000 0,005 0,010 0,015 0,020 0,025 0,030 0 5 10 15 20 25 30 i c (a) e (mws) t j = t jmax - 25c e rec t j = 25c e rec 0,000 0,005 0,010 0,015 0,020 0,025 0,030 0,035 0 3 6 9 12 15 18 r g ( w ww w ) e (mws) e off e on e on e off 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0 5 10 15 20 25 30 i c (a) e (mws) t j = t jmax -25c e off e on e on t j =25c e off 0,00 0,02 0,04 0,06 0,08 0,10 0,12 0 3 6 9 12 15 18 r g ( w ww w ) e (mws) copyright vincotech 7 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 9 pfc mosfet figure 10 pfc mosfet typical switching times as a typical switching times as a function of collector current function of gate resistor t = f( i d ) t = f( r g ) inductive load inductive load t j = 125 c t j = 125 c v ds = 400 v v ds = 400 v v gs = 10 v v gs = 10 v r gon = 4 ? i c = 15 a r goff = 4 ? figure 11 pfc fwd figure 12 pfc fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f( i c ) t rr = f( r gon ) t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 15 a r gon = 4 ? v gs = 10 v pfc t doff t f t don t r 0,001 0,010 0,100 1,000 0 5 10 15 20 25 30 i d (a) t ( m s) tf t doff t f t don t r 0,001 0,010 0,100 1,000 0 3 6 9 12 15 18 r g ( w ww w ) t ( m s) t j = t jmax -25c t rr t j = 25c t rr 0,000 0,003 0,006 0,009 0,012 0,015 0,018 0 3 6 9 12 15 18 r gon ( w ww w ) t rr ( m s) t rr t rr 0,000 0,002 0,004 0,006 0,008 0,010 0 5 10 15 20 25 30 i c (a) t rr ( m s) copyright vincotech 8 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 13 pfc fwd figure 14 pfc fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f( i c ) q rr = f( r gon ) at t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 15 a r gon = 4 ? v gs = 10 v figure 15 pfc fwd figure 16 pfc fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f( i c ) i rrm = f( r gon ) t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 15 a r gon = 4 ? v gs = 10 v pfc t j = t jmax -25c i rrm t j = 25c i rrm 0 5 10 15 20 25 30 35 0 3 6 9 12 15 18 r go n ( w ww w ) irr m (a) t j = t jmax - 25c q rr t j = 25c q rr 0,000 0,030 0,060 0,090 0,120 0,150 0 3 6 9 12 15 18 r gon ( w ) q rr ( m c) t j = t jmax - 25c i rrm t j = 25c i rrm 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i c (a) irr m (a) t j = t jmax -25c q rr t j = 25c q rr 0,000 0,040 0,080 0,120 0,160 0,200 0 5 10 15 20 25 30 i c (a) q rr ( m c) copyright vincotech 9 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 17 pfc fwd figure 18 pfc fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor d i 0 /d t ,d i rec /d t = f( i c ) d i 0 /d t ,d i rec /d t = f( r gon ) t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 15 a r gon = 4 ? v gs = 10 v figure 19 pfc mosfet figure 20 pfc fwd igbt/mosfet transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f( t p ) z thjh = f( t p ) d = t p / t d = t p / t r thjh = 1,13 k/w r thjh = 2,56 k/w igbt thermal model values fwd thermal model values r (k/w) tau (s) r (k/w) tau (s) 0,026 8,47e+00 0,12 2,23e+00 0,127 1,17e+00 0,49 2,82e-01 0,544 1,77e-01 1,11 6,57e-02 0,266 4,73e-02 0,49 1,17e-02 0,107 7,23e-03 0,30 2,09e-03 0,062 5,51e-04 0,05 2,12e-04 pfc di 0 /dt 25 t j = 25c di rec /dt 25 t j = t jmax - 25c di 0 /dt 125 di rec /dt 125 0 2000 4000 6000 8000 10000 12000 14000 16000 0 3 6 9 12 15 18 r g on ( w ) di rec / dt (a/ m s) t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt 125 di r /dt 125 t j = t jmax - 25c di r /dt 25 di 0 /dt 25 t j = 25c 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 i c (a) di rec / dt (a/ m s) copyright vincotech 10 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 21 pfc mosfet figure 22 pfc mosfet power dissipation as a collector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i c = f( t h ) t j = 150 oc t j = 150 oc v gs = 10 v figure 23 pfc fwd figure 24 pfc fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) t j = 175 oc t j = 175 oc pfc 0 30 60 90 120 150 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 0 50 100 150 200 t h ( o c) i c (a) 0 10 20 30 40 50 60 70 80 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 11 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 25 pfc mosfet figure 26 pfc mosfet safe operating area as a function gate voltage vs gate charge of drain-source voltage i d = f( v ds ) v gs = f( q g ) d = single pulse i d = 15 a t h = 80 oc v gs = 10 v t j = t jmax oc pfc v ds (v) i d (a) 10 3 10 0 10 -1 10 1 10 2 10 3 100us 1ms 10ms 100ms dc 10 2 10 0 10us 0 2 4 6 8 10 0 10 20 30 40 50 60 qg (nc) v gs (v) 120v 480v copyright vincotech 12 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 1 rectifier diode figure 2 rectifier diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f( v f ) z thjh = f( t p ) t p = 250 s d = t p / t r thjh = 1,728 k/w figure 3 rectifier diode figure 4 rectifier diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) t j = 150 oc t j = 150 oc input rectifier bridge 0 15 30 45 60 75 90 0,0 0,5 1,0 1,5 2,0 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 13 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 1 thyristor figure 2 thyristor typical thyristor forward current as thyristor transient thermal impedance a function of forward voltage as a function of pulse width i f = f( v f ) z thjh = f( t p ) t p = 250 s d = t p / t r thjh = 1,57 k/w figure 3 thyristor figure 4 thyristor power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) t j = 150 oc t j = 150 oc thyristor 0 10 20 30 40 50 0,0 0,3 0,6 0,9 1,2 1,5 1,8 v f (v ) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright vincotech 14 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 5 thyristor gate trigger characteristics figure 1 thermistor typical ntc characteristicas a function of temperature r t = f( t ) thyristor thermistor ntc-typical temperature characteristic 0 5000 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ ? t j =25 o c i g (a) v g (v) 10 1 10 2 10 0 10 -1 10 -2 10 2 10 -1 t j =125 o c 10 0 10 1 10 -3 t j =-40 o c 20v;20 ohm v gt i gt i gd 50w (0,5ms) 75w (0,1ms) 25w (8ms) p g (t p ) v gd copyright vincotech 15 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet t j 125 c r gon 4 ? r goff 4 ? figure 1 pfc mosfet figure 2 pfc mosfet turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon ( t e off = integrating time for e off ) ( t e on = integrating time for e on ) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 10 v v ge (100%) = 10 v v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 15 a i c (100%) = 15 a t doff = v r rm 0,07 s t don = 0,02 s t e off = 0,09 s t e on = 0,03 s figure 3 pfc mosfet figure 4 pfc mosfet turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 15 a i c (100%) = 15 a t f = 0,003 s t r = 0,004 s == = switching definitions pfc general conditions i c 10% v ge 10% t don v ce 5% -40 0 40 80 120 160 200 240 280 2,95 2,97 2,99 3,01 3,03 3,05 3,07 3,09 time(us) % i c v ce t eon v ge i c 1% v ce 90% v ge 90% -40 -20 0 20 40 60 80 100 120 140 -0,1 -0,05 0 0,05 0,1 time (us) % t doff t eoff v ce i c v ge fitted ic10% ic 90% ic 60% ic 40% -20 0 20 40 60 80 100 120 140 -0,005 0,005 0,015 0,025 0,035 time (us) % v ce i c tf i c 10% i c 90% -20 20 60 100 140 180 220 260 2,99 3,01 3,03 3,05 3,07 time(us) % tr v ce ic copyright vincotech 16 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 5 pfc mosfet figure 6 pfc mosfet turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 6,00 kw p on (100%) = 6,002 kw e off (100%) = 0,01 mj e on (100%) = 0,06 mj t e off = 0,09 s t e on = 0,0325 s figure 7 pfc mosfet figure 8 pfc fred gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v g e off = 0 v v d (100%) = 400 v v g e on = 10 v i d (100%) = 15 a v c (100%) = 400 v i rrm (100%) = -22 a i c (100%) = 15 a t rr = 0,01 s q g = 59,01 nc switching definitions pfc ic 1% uge90% -20 0 20 40 60 80 100 120 140 -0,2 -0,1 0 0,1 0,2 time (us) % poff eoff teoff uce3% uge10% -20 20 60 100 140 180 2,95 2,98 3,01 3,04 3,07 3,1 time(us) % pon eon teon -5 0 5 10 15 -40 -20 0 20 40 60 80 qg (nc) uge (v) i rrm 10% i rrm 90% i rrm 100% trr -160 -120 -80 -40 0 40 80 120 3 3,01 3,02 3,03 3,04 3,05 3,06 3,07 3,08 3,09 3,1 time(us) % id ud fitted copyright vincotech 17 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet figure 9 pfc fred figure 10 pfc fred turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec ( t q rr = integrating time for q rr ) ( t erec = integrating time for e rec ) i d (100%) = 15 a p rec (100%) = 6,00 kw q rr (100%) = 0,09 c e rec (100%) = 0,02 mj tqint = 0,07 s t e rec = 0,07 s switching definitions pfc tqint -200 -150 -100 -50 0 50 100 150 200 2,95 3 3,05 3,1 3,15 3,2 time(us) % id q rr -50 -10 30 70 110 150 190 230 270 310 2,95 2,98 3,01 3,04 3,07 3,1 3,13 time(us) % p rec erec te rec copyright vincotech 18 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet version ordering code in datamatrix as in packaging barcode as without scr, current sense in collector 10-FZ062TA099FH-P980D18 p980d18 p980d18 with scr, current sense in collector 10-fz062ta099fh01-p980d28 p980d28 p980d28 v r rm # boost stage(fz062ta099fh & fh01) rectifier(fz062ta099fh) rectifier(fz062ta099fh01) ordering code & marking ordering code and marking - outline - pinout outline pinout pin nr. 21 & 24 without electrical connection pin nr. 7 & 12 without electrical connection copyright vincotech 19 10 febr. 2015 / revision 4
10-FZ062TA099FH-P980D18/-fh01-p980d28 datasheet disclaimerlife support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright vincotech 20 10 febr. 2015 / revision 4

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